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Process Development, Characterization, Transient Relaxation, And Reliability Study of Hfo₂ And Hfsi(X)O(Y) Gate Oxide For 45Nm Technology And Beyond
Book Details :
Process Development, Characterization, Transient Relaxation, And Reliability Study of Hfo₂ And Hfsi(X)O(Y) Gate Oxide For 45Nm Technology And Beyond